Twinning mechanism at three-grain tri-junction during directional solidification of multi-crystalline silicon
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DOI: 10.1016/j.actamat.2017.10.042
Abstract: Abstract We propose a model to explain the formation mechanism of twin grains at the three-grain tri-junction (3GTJ) on the growth interface during directional solidification of multi-crystalline silicon. We also attempt to confirm its validity… read more here.
Keywords: grain tri; tri junction; three grain; solidification multi ... See more keywords