InAs‐based quantum cascade lasers emitting close to 25 µm
Sign Up to like & getrecommendations! Published in 2019 at "Electronics Letters"
DOI: 10.1049/el.2018.6413
Abstract: Indium arsenide (InAs)-based quantum cascade lasers (QCLs) operating close to 25 µm are reported. Thick n-doped InAs cladding layers were used for optical confinement. Fabry–Perot lasers exhibited a threshold current density as low as 1.1… read more here.
Keywords: based quantum; threshold current; quantum cascade; cascade lasers ... See more keywords
Direct confirmation of structural differences in single Shockley stacking faults expanding from different origins in 4H-SiC PiN diodes
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Applied Physics"
DOI: 10.1063/5.0021764
Abstract: Structural differences are investigated in partial dislocations that have considerably different threshold current densities for single Shockley-type stacking fault (1SSF) expansions in PiN diodes using transmission electron microscopy and scanning transmission electron microscopy as direct… read more here.
Keywords: microscopy; structural differences; threshold current; pin diodes ... See more keywords
Influence of gamma ray radiation on two-dimensional sub-threshold current of strained Si nano NMOSFET
Sign Up to like & getrecommendations! Published in 2019 at "Radiation Effects and Defects in Solids"
DOI: 10.1080/10420150.2019.1669036
Abstract: ABSTRACT The carrier transport in uniaxial strained Si N channel metalvn oxide semiconductor field effect transistor (NMOSFET) irradiated by gamma rays is analyzed. Based on the total dose irradiation effect, an analytical model of two-dimensional… read more here.
Keywords: sub threshold; nano nmosfet; strained nano; dimensional sub ... See more keywords
Performance characteristics of low threshold current 1.25 μm type-II GaInAs/GaAsSb ‘W’-lasers for optical communications
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/ac0b72
Abstract: Type-II ‘W’-lasers have made an important contribution to the development of mid-infrared laser diodes. In this paper, we show that a similar approach can yield high performance lasers in the optical communications wavelength range. (GaIn)As/Ga(AsSb)… read more here.
Keywords: temperature; optical communications; lasers optical; type ... See more keywords
Threshold Current of Arc-Less Current Commutation in a Hybrid DC Switch
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Components, Packaging and Manufacturing Technology"
DOI: 10.1109/tcpmt.2019.2915764
Abstract: Hybrid dc switches have become increasingly prominent due to their low ON-state energy loss and less arc erosion in comparison with conventional semiconductor and mechanical switches. Zero-voltage switching (ZVS) is a common method for realizing… read more here.
Keywords: current commutation; voltage; threshold current; arc less ... See more keywords
Mid-IR quantum dot cascade VCSEL: feasibility study and feature extraction.
Sign Up to like & getrecommendations! Published in 2022 at "Applied optics"
DOI: 10.1364/ao.447648
Abstract: Quantum cascade lasers with quantum dot (QD) active regions have been developed to overcome the drawbacks of quantum-well-based cascade lasers. Low threshold current and enhanced bandwidth characteristics of QD lasers can be combined with promising… read more here.
Keywords: dot cascade; vcsel feasibility; mid quantum; quantum dot ... See more keywords
Low Threshold Current and Polarization-Stabilized 795 nm Vertical-Cavity Surface-Emitting Lasers
Sign Up to like & getrecommendations! Published in 2023 at "Nanomaterials"
DOI: 10.3390/nano13061120
Abstract: Low threshold current and polarization-stabilized 795 nm vertical-cavity surface-emitting lasers (VCSELs) are fabricated by integrating a surface grating of high polarization selectivity and high reflectivity. The rigorous coupled-wave analysis method is used to design the… read more here.
Keywords: low threshold; surface; current polarization; polarization stabilized ... See more keywords
Reduced threshold current density of GaN-based green laser diode by applying polarization doping p-cladding layer
Sign Up to like & getrecommendations! Published in 2021 at "Chinese Optics Letters"
DOI: 10.3788/col202119.121404
Abstract: Absorption induced by activated magnesium (Mg) in a p-type layer contributes considerable optical internal loss in GaN-based laser diodes (LDs). An LD structure with a distributed polarization doping (DPD) p-cladding layer (CL) without intentional Mg… read more here.
Keywords: gan based; current density; polarization doping; layer ... See more keywords