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Published in 2018 at "Journal of Vacuum Science and Technology"
DOI: 10.1116/1.4991586
Abstract: A laser-assisted plasma etch process is presented as an alternative to reactive ion etching for Si wafer processing in upcoming integrated circuit technology nodes. Poly-Si films were etched using an upstream 13.56 MHz inductively coupled plasma…
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Keywords:
laser;
damage threshold;
sub damage;
threshold plasma ... See more keywords