Low sub-threshold swing realization with contacts of graphene/h-BN/MoS2 heterostructures in MoS2 transistors
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DOI: 10.1063/1.4997226
Abstract: MoS2 and other atomically thin-layered semiconductors have attracted intensive interest for their unique characteristics and have become promising candidates for short-channel transistor devices. In this work, we demonstrate an MoS2 transistor with a graphene/hBN/MoS2 heterostructure… read more here.
Keywords: sub threshold; mos2 transistor; threshold swing; low sub ... See more keywords