Optically Modulated Threshold Switching in Core–Shell Quantum Dot Based Memristive Device
Sign Up to like & getrecommendations! Published in 2020 at "Advanced Functional Materials"
DOI: 10.1002/adfm.201909114
Abstract: The threshold switching (TS) phenomenon in memristors has drawn great attention for its versatile applications in selectors, artificial neurons, true random number generators, and electronic integrations. The transition between nonvolatile resistive switching and volatile TS… read more here.
Keywords: threshold switching; quantum dot; core; core shell ... See more keywords
Threshold Switching Selectors: A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications (Adv. Sci. 10/2019)
Sign Up to like & getrecommendations! Published in 2019 at "Advanced Science"
DOI: 10.1002/advs.201970058
Abstract: A high‐performance selector is critical for X‐point high density memory chips. In article number 1900024, Huaqiang Wu, Bin Gao, Peng Zhou, and co‐workers present a threshold switching selector based on highly‐ordered Ag nanodots that can… read more here.
Keywords: selector based; memory; threshold switching; switching selector ... See more keywords
Threshold Switching in Single Metal‐Oxide Nanobelt Devices Emulating an Artificial Nociceptor
Sign Up to like & getrecommendations! Published in 2019 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.201900595
Abstract: Electronic devices that can simulate the dynamics of neurotransmission in the human body are of great interest for the development of artificial intelligence in modern information technology. An artificial nociceptor realized by a single metal‐oxide… read more here.
Keywords: threshold switching; metal oxide; nociceptor; nanobelt devices ... See more keywords
Realizing Bidirectional Threshold Switching in Ag/Ta2O5/Pt Diffusive Devices for Selector Applications
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-018-6730-7
Abstract: Memristor crossbar arrays have great potential in brain inspired computing and the next generation high-density memories. The sneak current issue, however, seriously degrades their performance with increasing array size. Selectors with volatile threshold switching (TS)… read more here.
Keywords: selector applications; voltage; threshold switching; ta2o5 diffusive ... See more keywords
Self-Compliant Threshold Switching Devices with High On/Off ratio by Control of Quantized Conductance in Ag Filaments.
Sign Up to like & getrecommendations! Published in 2023 at "Nano letters"
DOI: 10.1021/acs.nanolett.3c00327
Abstract: Threshold switches based on conductive metal bridge devices are useful as selectors to block sneak leakage paths in memristor arrays used in neuromorphic computing and emerging nonvolatile memory. We demonstrate that control of Ag-cation concentration… read more here.
Keywords: threshold; switching devices; control; threshold switching ... See more keywords
Ag:SiO xN y-Based Bilayer ReRAM Structure with Self-Limiting Bidirectional Threshold Switching Characteristics for Cross-Point Array Application.
Sign Up to like & getrecommendations! Published in 2018 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.8b12385
Abstract: We fabricate a Pt/Ag:SiO xN y/Ti programmable metallization cell exhibiting bidirectional threshold switching (TS) or nonvolatile resistive switching (RS) characteristics through a simple thermal annealing process. The cell composed of pristine Ag:SiO xN y layers… read more here.
Keywords: sio based; threshold switching; switching characteristics; self limiting ... See more keywords
Robust Threshold-Switching Behavior Assisted by Cu Migration in a Ferroionic CuInP2S6 Heterostructure.
Sign Up to like & getrecommendations! Published in 2023 at "ACS nano"
DOI: 10.1021/acsnano.3c02406
Abstract: The two-dimensional layered material CuInP2S6 (CIPS) has attracted significant research attention due to its nontrivial physical properties, including room-temperature ferroelectricity at the ultrathin limit and substantial ionic conductivity. Despite many efforts to control its ionic… read more here.
Keywords: switching behavior; threshold switching; robust threshold; heterostructure ... See more keywords
'Stateful' threshold switching for neuromorphic learning.
Sign Up to like & getrecommendations! Published in 2022 at "Nanoscale"
DOI: 10.1039/d1nr05502j
Abstract: Memristors have promising prospects in developing neuromorphic chips that parallel the brain-level power efficiency and brain-like computational functions. However, the limited available ON/OFF states and high switching voltage in conventional resistive switching (RS) constrain its… read more here.
Keywords: neuromorphic learning; threshold switching; power; stateful threshold ... See more keywords
Electroforming-free threshold switching of NbOx–based selector devices by controlling conducting phases in the NbOx layer for the application to crossbar array architectures
Sign Up to like & getrecommendations! Published in 2022 at "RSC Advances"
DOI: 10.1039/d2ra02930h
Abstract: Bipolar threshold switching characteristics, featuring volatile transition between the high-resistance state (HRS) at lower voltage than threshold voltage (Vth) and the low-resistance state (LRS) at higher voltage irrespective of the voltage polarity, are investigated in… read more here.
Keywords: conducting phases; electroforming free; free threshold; nbox layer ... See more keywords
Thermal transport in metal-NbOx-metal cross-point devices and its effect on threshold switching characteristics.
Sign Up to like & getrecommendations! Published in 2023 at "Nanoscale"
DOI: 10.1039/d3nr00173c
Abstract: Volatile threshold switching and current-controlled negative differential resistance (NDR) in metal-oxide-metal (MOM) devices result from thermally driven conductivity changes induced by local Joule heating and are therefore influenced by the thermal properties of the device-structure.… read more here.
Keywords: effect; point devices; threshold switching; metal ... See more keywords
Threshold switching in SiGeAsTeN chalcogenide glass prepared by As ion implantation into sputtered SiGeTeN film
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.5008927
Abstract: A memory cell composed of a selector device and a storage device is the basic unit of phase change memory. The threshold switching effect, main principle of selectors, is a universal phenomenon in chalcogenide glasses.… read more here.
Keywords: threshold switching; chalcogenide glass; sigeasten chalcogenide; sputtered sigeten ... See more keywords