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Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202202359
Abstract: Organic electrochemical transistors (OECTs) have shown promise as transducers and amplifiers of minute electronic potentials due to their large transconductances. Tuning the OECT threshold voltage is important to achieve low‐powered devices with amplification properties within…
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Keywords:
tuning organic;
threshold voltage;
polymer;
organic electrochemical ... See more keywords
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Published in 2023 at "Advanced Materials"
DOI: 10.1002/adma.202210612
Abstract: Semiconductor devices are currently one of the most common energy consumption devices. Significantly reducing the energy consumption of semiconductor devices with advanced energy‐efficient technologies is highly desirable. The discovery of super‐semiconductors (SSCs) based on metallic…
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Keywords:
zero threshold;
threshold voltage;
near zero;
voltage ... See more keywords
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1
Published in 2021 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202100082
Abstract: Thin‐film transistors (TFTs) based on amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) have attracted vast attention for use in organic light‐emitting diode (AMOLED) displays due to their high electron mobility and large current on–off ratio. Although amorphous oxide semiconductors…
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Keywords:
film;
compensation;
thin film;
threshold voltage ... See more keywords
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Published in 2017 at "Microsystem Technologies"
DOI: 10.1007/s00542-016-2995-z
Abstract: For low power System-on-Chip applications, where cost is a critical factor, recently proposed epitaxial delta doped channel (E$$\delta$$δDC) structure is a promising alternative architecture within the planar bulk MOS transistor technology due to enhanced electrostatic…
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Keywords:
sub threshold;
voltage;
mos transistor;
delta ... See more keywords
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Published in 2019 at "Microsystem Technologies"
DOI: 10.1007/s00542-019-04324-3
Abstract: In this paper an enhancement mode (E-mode) short channel N-polar GaN MOS-HEMT is proposed. In order to mitigate different short channel effects, workfunction engineering technique is applied to the gate electrode. An analytical model for…
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Keywords:
threshold voltage;
channel potential;
short channel;
mode ... See more keywords
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Published in 2020 at "Microsystem Technologies"
DOI: 10.1007/s00542-020-04781-1
Abstract: A 10 nm Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and Complementary Metal Oxide Semiconductor (CMOS) are presented in this paper. A channel length of 24.6 nm and an optimized threshold voltage of 0.40961 v at drain…
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Keywords:
voltage;
drain;
semiconductor;
mosfet ... See more keywords
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Published in 2018 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-018-1279-5
Abstract: AbstractA double-gate (DG) heterojunction tunnel FinFET structure with a source overlap region was analyzed to optimize its performance and validate technology computer-aided design (TCAD) simulation results by modeling the surface potential, electric field, and threshold…
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Keywords:
model;
threshold voltage;
surface potential;
gate ... See more keywords
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Published in 2020 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-020-08503-1
Abstract: This paper presents explicit analytical modeling of a gate all around (GAA) strained silicon metal-oxide-semicondutor field-effect transistor (MOSFET) with elliptical cross section by incorporating the popular gate work function engineering (WFE) concept of lateral mole…
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Keywords:
voltage;
short channel;
threshold voltage;
gate ... See more keywords
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Published in 2017 at "Silicon"
DOI: 10.1007/s12633-017-9631-0
Abstract: The paper reports the analytical model for the analysis of the effects of channel doping on the threshold voltage. A silicon germanium p-MOSFET with high-k dielectric material along with a metal gate is used for…
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Keywords:
mosfet;
threshold voltage;
channel doping;
doping threshold ... See more keywords
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2
Published in 2020 at "Silicon"
DOI: 10.1007/s12633-020-00400-w
Abstract: In this work, a threshold voltage model of Tri-Gate Schottky-Barrier (TGSB) MOSFET is presented by coupling threshold voltage models of symmetric and asymmetric double-gate Schottky-Barrier (SB) MOSFET structures giving due weight to each structure. The…
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Keywords:
voltage;
schottky barrier;
tri gate;
threshold voltage ... See more keywords
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Published in 2017 at "Dyes and Pigments"
DOI: 10.1016/j.dyepig.2017.03.063
Abstract: Abstract In this work, the photoinduced optoelectronic properties of a conjugated polymer from device characterization and quantum calculations have been studied. It was demonstrated that the photosensitive conjugated polymer with electron donor–acceptor dyad (6) which…
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Keywords:
voltage;
charge;
threshold voltage;
donor acceptor ... See more keywords