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Published in 2019 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ab0235
Abstract: A high di/dt 4H-SiC thyristor with '-shaped' n-base is proposed and investigated by simulation. Unlike the conventional SiC thyristors, the proposed SiC thyristor features a lightly-highly-lightly doped ('-shaped') n-base. By modulating the concentration difference of…
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Keywords:
high sic;
shaped base;
thyristor shaped;
thyristor ... See more keywords