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Published in 2018 at "IEEE Transactions on Terahertz Science and Technology"
DOI: 10.1109/tthz.2017.2785043
Abstract: Planar diode structures with small area active region (∼1 μm2) based on highly doped GaAs/AlAs superlattices (SLs) are investigated. The possibility of effective application of such diodes in the terahertz frequency range is discussed. Monte…
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Keywords:
increase self;
self oscillation;
frequencies thz;
transformation frequencies ... See more keywords