First-principles calculations of defect formation energy and carrier concentration of Ti4+, Ta5+ and W6+ doped KSr2Nb5O15
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DOI: 10.1016/j.commatsci.2019.109427
Abstract: Abstract The formation enthalpy, chemical potential, defect formation energy and charge carrier concentration of Ti4+, Ta5+ and W6+ doped KSr2Nb5O15 (KSN-Ti, KSN-Ta and KSN-W) are obtained using first principles calculations for the purpose of predicting… read more here.
Keywords: carrier concentration; ti4 ta5; formation; ta5 doped ... See more keywords