Modeling of total ionizing dose (TID) effects on the nonuniform distribution of Si/SiO2 interface trap energy states in MOS devices
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DOI: 10.1038/s41598-025-01325-3
Abstract: This paper presents a model of total ionizing dose (TID) effects on the generation of Si/SiO\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$_2$$\end{document} interface traps in MOS devices, and their density of states… read more here.
Keywords: dose tid; tid effects; ionizing dose; total ionizing ... See more keywords
A Study of SEU and TID Effects in 25-GHz LC -VCOs in 22-nm FinFET
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2025.3543124
Abstract: Voltage-controlled oscillators (VCOs) are a fundamental building block in all frequency synthesis circuits and have a heavy influence on the overall system’s electrical performance. Moreover, when operating in a radiation environment, VCOs have been identified… read more here.
Keywords: tid effects; seu tid; tex math; inline formula ... See more keywords