TID-Induced Breakdown Voltage Degradation in Uniform and Linear Variable Doping SOI p-LDMOSFETs
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DOI: 10.1109/tns.2019.2958292
Abstract: The breakdown voltage (BVDS) of uniform doping (UD) and linear variable doping (LVD) silicon-on-insulator (SOI) p-channel laterally diffused metal oxide semiconductor field effect transistors (p-LDMOSFETs) is examined after exposure to the total ionizing dose (TID).… read more here.
Keywords: breakdown voltage; tid induced; variable doping; linear variable ... See more keywords