Impact of layout and profile optimization for inverse-mode SiGe HBT on SET and TID responses
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DOI: 10.1016/j.microrel.2019.113561
Abstract: Abstract Layout and profile adjustments are presented based on TCAD simulation to improve the inverse-mode performances of silicon-germanium heterojunction bipolar transistor (SiGe HBT). Then the single event transient (SET) and total ionizing dose (TID) sensitivity… read more here.
Keywords: mode; set tid; sige hbt; layout profile ... See more keywords