Multiple Physical Time Scales and Dead Time Rule in Few-Nanometers Sized Graphene-SiOx-Graphene Memristors.
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DOI: 10.1021/acs.nanolett.7b03000
Abstract: The resistive switching behavior in SiOx-based phase change memory devices confined by few nanometer wide graphene nanogaps is investigated. Our experiments and analysis reveal that the switching dynamics is not only determined by the commonly… read more here.
Keywords: voltage; graphene; time; dead time ... See more keywords