Material Design of New p-Type Tin Oxyselenide Semiconductor through Valence Band Engineering and Its Device Application.
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DOI: 10.1021/acsami.9b12186
Abstract: This paper reports a new p-type tin oxyselenide (SnSeO), which was designed with the concept that the valence band (VB) edge from O 2p orbitals in the majority of metal oxides becomes delocalized by hybridizing… read more here.
Keywords: tin oxyselenide; valence band; new type; type tin ... See more keywords