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Published in 2018 at "Acta Materialia"
DOI: 10.1016/j.actamat.2017.11.044
Abstract: Abstract We have developed TiN/AlN/c-sapphire epitaxial heterostructures and compared it with TiN/c-sapphire epitaxial heterostructures, needed for GaN-based LEDs and lasers. AlN is used as a buffer layer to provide a high misfit strain and facilitate…
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Keywords:
tin aln;
tin sapphire;
tin;
aln ... See more keywords