Investigation of electrical and capacitance- voltage characteristics of GO/TiO2/n-Si MOS device
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DOI: 10.1016/j.mssp.2020.105070
Abstract: Abstract In this paper electrical analysis GO/TiO2/Si MOS junction was performed. Current–voltage (I–V) characteristics of diode were analyzed at 298–398 K. Several parameters such as ideality factor (η), barrier height ( φ B ), rectification ratio… read more here.
Keywords: voltage; tio2 mos; capacitance voltage; investigation electrical ... See more keywords