Improved rectification characteristics by engineering energy barrier height in TiOx-based RRAM
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DOI: 10.1016/j.mee.2020.111498
Abstract: Abstract Resistive random access memory (RRAM) is a strong candidate for next-generation memory. Despite its versatility, the sneak path current severely threatens accurate read operations, preventing RRAM from being expanded to high density array. To… read more here.
Keywords: tiox devices; rectification; barrier height; energy barrier ... See more keywords