Gate-Controlled Metal-Insulator Transition in TiS3 Nanowire Field-Effect Transistors.
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DOI: 10.1021/acsnano.8b08260
Abstract: We explore the electrical characteristics of TiS3 nanowire field-effect transistor (FETs), over the wide temperature range from 3 to 350 K. These nanomaterials have a quasi-one-dimensional (1D) crystal structure and exhibit a gate-controlled metal-insulator transition… read more here.
Keywords: tis3 nanowire; nanowire field; controlled metal; gate controlled ... See more keywords