Analog switching characteristics in TiW/Al2O3/Ta2O5/Ta RRAM devices
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DOI: 10.1063/1.5100075
Abstract: In this letter, we report analog switching characteristics in an analog resistive random access memory device based on a TiW/Al2O3/Ta2O5/Ta stack. For this device, both oxides were grown by using an atomic layer deposition system… read more here.
Keywords: al2o3 ta2o5; switching characteristics; analog switching; tiw al2o3 ... See more keywords