Investigation of Retention Noise for 3-D TLC NAND Flash Memory
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2018.2886359
Abstract: In this paper, the retention noise [electron emission statistics (EES)] after program operation of 3-D triple-level program cell (TLC) NAND flash memory is investigated. Three main noise sources, consisting of essential EES (EEES), electron numbers… read more here.
Keywords: tlc nand; flash memory; retention; nand flash ... See more keywords
CRRC: Coordinating Retention Errors, Read Disturb Errors and Huffman Coding on TLC NAND Flash Memory
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Transactions on Dependable and Secure Computing"
DOI: 10.1109/tdsc.2022.3177812
Abstract: Nowadays, TLC NAND flash memory has become a mainstream storage medium because of its large capacity and low cost. However, TLC NAND flash memory could have the reliability problem (such as the retention errors and… read more here.
Keywords: tlc nand; nand flash; flash memory; errors read ... See more keywords