Identification of Mn dopant in the structure of TlInS2 layered semiconductor
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DOI: 10.1088/2053-1591/ab063e
Abstract: The structure of TlInS2 layered semiconductor doped with 0.3% concentration of Mn impurity has been investigated by using x-ray diffraction (XRD) and Electron Paramagnetic Resonance (EPR) spectroscopy. The experiments were carried out to probe the… read more here.
Keywords: layered semiconductor; structure; structure tlins2; tlins2 layered ... See more keywords