Comparative study on in situ surface cleaning effect of intrinsic oxide-covering GaAs surface using TMA precursor and Al2O3 buffer layer for HfGdO gate dielectrics
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DOI: 10.1039/c8tc00070k
Abstract: In this work, comparative study on the cleaning effect of the intrinsic oxide covering GaAs surface using TMA precursor and Al2O3 buffer layer were performed. GaAs substrates were either exposed to the TMA precursor or… read more here.
Keywords: layer; surface; tma precursor; buffer layer ... See more keywords