Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices*
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DOI: 10.1088/1674-1056/26/8/087501
Abstract: The 1-Mb and 4-Mb commercial toggle magnetoresistive random-access memories (MRAMs) with and 0.18- complementary metal–oxide–semiconductor (CMOS) process respectively and different magnetic tunneling junctions (MTJs) are irradiated with a Cobalt-60 gamma source. The electrical functions of… read more here.
Keywords: bit errors; random access; toggle magnetoresistive; read bit ... See more keywords