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   Articles with "top gate" as a keyword



Integrated Top‐Gate Organic Electrochemical Transistors: A Scalable Approach for Fast and Efficient Operation

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recommendations! Published in 2024 at "Advanced Electronic Materials"

DOI: 10.1002/aelm.202400656

Abstract: Organic electrochemical transistors (OECTs) are gaining attention for their ease of fabrication, flexibility, and biocompatibility, with applications in biosignal sensing, neuromorphic computing, wearable health monitors, environmental monitoring, and bioelectronic interfaces. The interactions between ionic and… read more here.

Keywords: organic electrochemical; gate; electrochemical transistors; operation ... See more keywords

Staggered top-gate PDIF-CN2 N-type thin film transistors on flexible plastic substrates

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recommendations! Published in 2018 at "Organic Electronics"

DOI: 10.1016/j.orgel.2018.03.019

Abstract: Abstract In this work, staggered top-gate n-type organic thin film transistors (OTFTs) with evaporated PDIF-CN2 semiconducting layers, spin-coated Cytop™ dielectric barriers and channel lengths ranging from 100 to 2 μm were fabricated on polyethylene-naphtalate (PEN) substrates.… read more here.

Keywords: pdif cn2; thin film; gate; top gate ... See more keywords

WSe2 as Transparent Top Gate for Infrared Near-Field Microscopy.

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recommendations! Published in 2022 at "Nano letters"

DOI: 10.1021/acs.nanolett.2c01658

Abstract: Independent control of carrier density and out-of-plane displacement field is essential for accessing novel phenomena in two-dimensional (2D) material heterostructures. While this is achieved with independent top and bottom metallic gate electrodes in transport experiments,… read more here.

Keywords: infrared near; near field; microscopy; top gate ... See more keywords

Engineering Top Gate Stack for Wafer-Scale Integrated Circuit Fabrication Based on Two-Dimensional Semiconductors.

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recommendations! Published in 2022 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.1c22990

Abstract: In recent years, two-dimensional (2D) semiconductors have attracted considerable attention from both academic and industrial communities. Recent research has begun transforming from constructing basic field-effect transistors (FETs) into designing functional circuits. However, device processing remains… read more here.

Keywords: two dimensional; circuit; dimensional semiconductors; top gate ... See more keywords

p-Type Conversion of WS2 and WSe2 by Position-Selective Oxidation Doping and Its Application in Top Gate Transistors.

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recommendations! Published in 2023 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.3c04052

Abstract: For the complementary operation of two-dimensional (2D) material-based field-effect transistors (FETs), high-performance p-type FETs are essential. In this study, we applied surface charge-transfer doping from WOx, which has a large work function of ∼6.5 eV,… read more here.

Keywords: ws2 wse2; top gate; type conversion; ws2 ... See more keywords

Solvent-Free Processable and Photo-Patternable Hybrid Gate Dielectric for Flexible Top-Gate Organic Field-Effect Transistors.

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recommendations! Published in 2017 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.6b14500

Abstract: We report a novel solvent-free and direct photopatternable poly[(mercaptopropyl)methyl-siloxane] (PMMS) hybrid dielectric for flexible top-gate organic field-effect transistors (OFETs) utilizing a photoactivated thiol-ene reaction under UV irradiation of 254 nm to induce cross-linking, even in… read more here.

Keywords: gate; flexible top; top gate; solvent free ... See more keywords

Current Enhancement and Bipolar Current Modulation of Top-Gate Transistors Based on Monolayer MoS2 on Three-Layer W xMo1- xS2.

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recommendations! Published in 2018 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.8b06327

Abstract: We demonstrated the top-gate transistors composed of monolayer MoS2 grown on three-layer alloys Mo xW1- xS2 prepared by sequential sulfurization of predeposited transition metal films. The elemental mapping of the alloy indicates a uniform distribution… read more here.

Keywords: three layer; current modulation; gate; gate transistors ... See more keywords

Precursor Engineering of Atomic Layer Deposition for Top-Gate Insulators on Monolayer MoS2 Transistors.

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recommendations! Published in 2025 at "ACS nano"

DOI: 10.1021/acsnano.5c10705

Abstract: Integration of ultrathin, high-quality gate insulators is critical to the success of two-dimensional (2D) semiconductor transistors in next-generation nanoelectronics. Here, we investigate the impact of atomic layer deposition (ALD) precursor choice on the nucleation and… read more here.

Keywords: layer; seed; deposition; monolayer mos2 ... See more keywords

Stabilization of top-gate p-SnO transistors via ultrathin Al2O3 interlayers for hysteresis-free operation

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recommendations! Published in 2025 at "Journal of Materials Chemistry C"

DOI: 10.1039/d5tc00399g

Abstract: Hysteresis-free and stable operation achieved in top-gate SnO TFTs by inserting an Al2O3 interlayer that protects the surface of the metastable SnO channel. read more here.

Keywords: operation; hysteresis free; gate sno; top gate ... See more keywords

Post-annealing effect of low temperature atomic layer deposited Al2O3 on the top gate IGZO TFT

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recommendations! Published in 2024 at "Nanotechnology"

DOI: 10.1088/1361-6528/ad1d16

Abstract: Electronical properties of top gate amorphous InGaZnO4 thin film transistors (TFTs) could be controlled by post-annealing treatment, which has a great impact on the Al2O3 insulator. To investigate the effect of post-annealing on Al2O3, Al/Al2O3/p-Si… read more here.

Keywords: temperature; effect; post annealing; post ... See more keywords

Chemical vapor deposited monolayer MoS2 top-gate MOSFET with atomic-layer-deposited ZrO2 as gate dielectric

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recommendations! Published in 2018 at "Semiconductor Science and Technology"

DOI: 10.1088/1361-6641/aaaa5f

Abstract: For the first time, ZrO2 dielectric deposition on pristine monolayer MoS2 by atomic layer deposition (ALD) is demonstrated and ZrO2/MoS2 top-gate MOSFETs have been fabricated. ALD ZrO2 overcoat, like other high-k oxides such as HfO2… read more here.

Keywords: mos2 top; atomic layer; gate; mos2 ... See more keywords