Staggered top-gate PDIF-CN2 N-type thin film transistors on flexible plastic substrates
Sign Up to like & getrecommendations! Published in 2018 at "Organic Electronics"
DOI: 10.1016/j.orgel.2018.03.019
Abstract: Abstract In this work, staggered top-gate n-type organic thin film transistors (OTFTs) with evaporated PDIF-CN2 semiconducting layers, spin-coated Cytop™ dielectric barriers and channel lengths ranging from 100 to 2 μm were fabricated on polyethylene-naphtalate (PEN) substrates.… read more here.
Keywords: pdif cn2; thin film; gate; top gate ... See more keywords
WSe2 as Transparent Top Gate for Infrared Near-Field Microscopy.
Sign Up to like & getrecommendations! Published in 2022 at "Nano letters"
DOI: 10.1021/acs.nanolett.2c01658
Abstract: Independent control of carrier density and out-of-plane displacement field is essential for accessing novel phenomena in two-dimensional (2D) material heterostructures. While this is achieved with independent top and bottom metallic gate electrodes in transport experiments,… read more here.
Keywords: infrared near; near field; microscopy; top gate ... See more keywords
Engineering Top Gate Stack for Wafer-Scale Integrated Circuit Fabrication Based on Two-Dimensional Semiconductors.
Sign Up to like & getrecommendations! Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.1c22990
Abstract: In recent years, two-dimensional (2D) semiconductors have attracted considerable attention from both academic and industrial communities. Recent research has begun transforming from constructing basic field-effect transistors (FETs) into designing functional circuits. However, device processing remains… read more here.
Keywords: two dimensional; circuit; dimensional semiconductors; top gate ... See more keywords
p-Type Conversion of WS2 and WSe2 by Position-Selective Oxidation Doping and Its Application in Top Gate Transistors.
Sign Up to like & getrecommendations! Published in 2023 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.3c04052
Abstract: For the complementary operation of two-dimensional (2D) material-based field-effect transistors (FETs), high-performance p-type FETs are essential. In this study, we applied surface charge-transfer doping from WOx, which has a large work function of ∼6.5 eV,… read more here.
Keywords: ws2 wse2; top gate; type conversion; ws2 ... See more keywords
Solvent-Free Processable and Photo-Patternable Hybrid Gate Dielectric for Flexible Top-Gate Organic Field-Effect Transistors.
Sign Up to like & getrecommendations! Published in 2017 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.6b14500
Abstract: We report a novel solvent-free and direct photopatternable poly[(mercaptopropyl)methyl-siloxane] (PMMS) hybrid dielectric for flexible top-gate organic field-effect transistors (OFETs) utilizing a photoactivated thiol-ene reaction under UV irradiation of 254 nm to induce cross-linking, even in… read more here.
Keywords: gate; flexible top; top gate; solvent free ... See more keywords
Current Enhancement and Bipolar Current Modulation of Top-Gate Transistors Based on Monolayer MoS2 on Three-Layer W xMo1- xS2.
Sign Up to like & getrecommendations! Published in 2018 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.8b06327
Abstract: We demonstrated the top-gate transistors composed of monolayer MoS2 grown on three-layer alloys Mo xW1- xS2 prepared by sequential sulfurization of predeposited transition metal films. The elemental mapping of the alloy indicates a uniform distribution… read more here.
Keywords: three layer; current modulation; gate; gate transistors ... See more keywords
Chemical vapor deposited monolayer MoS2 top-gate MOSFET with atomic-layer-deposited ZrO2 as gate dielectric
Sign Up to like & getrecommendations! Published in 2018 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/aaaa5f
Abstract: For the first time, ZrO2 dielectric deposition on pristine monolayer MoS2 by atomic layer deposition (ALD) is demonstrated and ZrO2/MoS2 top-gate MOSFETs have been fabricated. ALD ZrO2 overcoat, like other high-k oxides such as HfO2… read more here.
Keywords: mos2 top; atomic layer; gate; mos2 ... See more keywords
Printed in-plane electrolyte-gated transistor based on zinc oxide
Sign Up to like & getrecommendations! Published in 2022 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ac48da
Abstract: Printed electronics is a reputable research area that aims at simple alternatives of manufacturing low-cost, eco-friendly, and biodegradable electronic devices. Among these devices, electrolyte-gated transistors (EGTs) stand out due to their simple manufacturing process and… read more here.
Keywords: gate; top gate; zinc oxide; transistor ... See more keywords
Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2019.2933745
Abstract: We propose double-gated n-type WSe2 FETs with low leakage, low hysteresis top gate high-k dielectric stack. The top gate dielectric layer is deposited by HfO2 ALD on an Al2O3 seed layer obtained from the evaporation… read more here.
Keywords: top gate; sub sub; sub; hysteresis ... See more keywords
Piezoelectric Pressure Sensing Device Using Top-Gate Effect of Dual-Gate a-IGZO TFT
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Sensors Journal"
DOI: 10.1109/jsen.2016.2639525
Abstract: We propose a pressure sensor composed of single-gate and dual-gate amorphous-indium–gallium–zinc–oxide thin-film transistors (TFTs) that are integrated with a P(VDF-TrFE)/PZT composite piezo-capacitor. The TFTs are connected in an inverter configuration, where the piezo-capacitor is connected… read more here.
Keywords: piezoelectric pressure; gate; dual gate; top gate ... See more keywords
Solution Processed Top-Gate High-Performance Organic Transistor Nonvolatile Memory With Separated Molecular Microdomains Floating-Gate
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2017.2679718
Abstract: In this letter, a top-gate high-performance floating-gate organic field-effect transistor nonvolatile memory (FG-OFET-NVM), where the four-layer stacked core architecture is processed by a successive solution spin-coating method, is demonstrated. The floating-gate layer is prepared by… read more here.
Keywords: gate; gate high; high performance; top gate ... See more keywords