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Published in 2017 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.7b06204
Abstract: The electronic properties of the HfO2/MoS2 interface were investigated using multifrequency capacitance-voltage (C-V) and current-voltage characterization of top-gated MoS2 metal-oxide-semiconductor field effect transistors (MOSFETs). The analysis was performed on few layer (5-10) MoS2 MOSFETs fabricated…
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Keywords:
top gated;
interface;
hfo2 mos2;
spectroscopy ... See more keywords
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Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5090269
Abstract: Oxide heterostructures are an attractive platform for incorporation in field-effect transistors (FETs) due to their diverse physical properties which can be tuned by electrostatic gating. We report a top-gated FET based on a SrTiO3 delta-doped…
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Keywords:
delta doped;
field;
field effect;
top gated ... See more keywords