In-Situ Measurement of Total Ionising Dose Induced Changes in Threshold Voltage and Temperature Coefficients of RADFETs
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DOI: 10.1109/tns.2016.2630275
Abstract: This work presents results of a total ionising dose experiment, during which p-channel RADFETs were irradiated and measured under different gate bias conditions using an in-situ technique. The measurement system allowed threshold voltage shifts and… read more here.
Keywords: temperature; total ionising; threshold voltage; ionising dose ... See more keywords