Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor
Sign Up to like & getrecommendations! Published in 2017 at "Science China Information Sciences"
DOI: 10.1007/s11432-017-9239-5
Abstract: With the continuously scaling down of semiconductor technology, the traditional SiO2 as gate dielectric is approaching the physical and electrical limits. Some problems, such as the increasing leakage current and reliability issues, seriously affect the… read more here.
Keywords: hfo2 based; gate; total ionizing; ionizing dose ... See more keywords
Investigation of total ionizing dose effect on SOI tunnel FET
Sign Up to like & getrecommendations! Published in 2019 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2019.106186
Abstract: Abstract In this paper, effect of gamma radiation on SOI-based Tunnel Field Effect Transistor and its application as radiation dosimeter has been investigated. Throughout the paper, the exhaustive simulations have been carried out in order… read more here.
Keywords: region; radiation; soi; investigation total ... See more keywords
Experimental investigation on total-ionizing-dose radiation effects on the electrical properties of SOI-LIGBT
Sign Up to like & getrecommendations! Published in 2021 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2020.107952
Abstract: Abstract In this paper, the experimental investigation on the electrical properties of silicon-on-insulator lateral insulated-gate bipolar transistor (SOI-LIGBT) after total-ionizing-dose (TID) irradiation is presented. We find that the TID irradiation reduces the threshold voltage (Vth),… read more here.
Keywords: irradiation; experimental investigation; soi ligbt; total ionizing ... See more keywords
The influence of channel width on total ionizing dose responses of the 130 nm H-gate partially depleted SOI NMOSFETs
Sign Up to like & getrecommendations! Published in 2020 at "Radiation Effects and Defects in Solids"
DOI: 10.1080/10420150.2019.1703114
Abstract: ABSTRACT An anomalous total dose effect that the wider channel device is more susceptible to total ionizing dose than the narrow one is observed with the 0.13 µm H-gate partially depleted silicon-on-insulator technology. The measured results… read more here.
Keywords: channel; total ionizing; ionizing dose; gate partially ... See more keywords
Total ionizing dose effects in multiple-gate field-effect transistor
Sign Up to like & getrecommendations! Published in 2017 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/aa6c02
Abstract: This paper focuses on total ionizing dose (TID) effects induced in multiple-gate field-effect transistors. The impact of device architecture, geometry and scaling on the TID response of multiple-gate transistors is reviewed in both bulk and… read more here.
Keywords: gate field; multiple gate; total ionizing; ionizing dose ... See more keywords
Investigation of Total-Ionizing Dose Effects on the Two-Dimensional Transition Metal Dichalcogenide Field-Effect Transistors
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Access"
DOI: 10.1109/access.2019.2922408
Abstract: Due to the excellent electrical properties, the emerging field-effect transistor (FET) based on two-dimensional transition metal dischalcogenide (TMD) is an excellent candidate for future space applications. However, the device performance is significantly impacted by total-ionizing… read more here.
Keywords: transition metal; ionizing dose; total ionizing; field effect ... See more keywords
Effects of Total-Ionizing-Dose Irradiation on SEU- and SET-Induced Soft Errors in Bulk 40-nm Sequential Circuits
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2016.2614963
Abstract: Synergetic effects of total-ionizing-dose irradiation on the single event upset (SEU) and single event transient (SET) performance of 40-nm sequential circuits are studied at doses up to 2 Mrad(SiO2). The impacts of input pattern and… read more here.
Keywords: seu set; set induced; total ionizing; ionizing dose ... See more keywords
Proton-Induced Displacement Damage and Total-Ionizing-Dose Effects on Silicon-Based MEMS Resonators
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2017.2749180
Abstract: The response of silicon-based microelectromechanical systems resonators to proton irradiation is determined by the combined effects of displacement damage and total ionizing dose (TID). Displacement damage (DD) can lead to carrier removal, which tends to… read more here.
Keywords: displacement damage; silicon based; damage total; total ionizing ... See more keywords
Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2018.2875451
Abstract: We investigated the total ionizing dose (TID) influence on the single-event multiple-cell upsets (MCUs) in 65-nm 6-T static random-access memory and found that MCU sensitivity of the device is enhanced by TID. MCU caused by… read more here.
Keywords: influence single; event multiple; single event; ionizing dose ... See more keywords
Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2018.2884037
Abstract: The impact of the manufacturing process on the radiation-induced degradation effects observed in CMOS image sensors (CISs) at the MGy total ionizing dose (TID) levels is investigated. Moreover, the vulnerability of the partially pinned PHDs… read more here.
Keywords: dark current; radiation; ionizing dose; cmos image ... See more keywords
Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2019.2890827
Abstract: We evaluate the total ionizing dose (TID) responses of InGaAs nMOS FinFETs with different gate lengths irradiated with 10-keV X-rays under different gate biases. The largest degradation after irradiation occurs at $V_{\mathrm {G}} = -1$… read more here.
Keywords: sub sub; sub; ionizing dose; length ... See more keywords