Breaking the Trade‐Off Between Mobility and On–Off Ratio in Oxide Transistors
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DOI: 10.1002/adma.202413212
Abstract: Amorphous oxide semiconductors (AOS) are pivotal for next‐generation electronics due to their high electron mobility and excellent optical properties. However, In2O3, a key material in this family, encounters significant challenges in balancing high mobility and… read more here.
Keywords: trade mobility; breaking trade; mobility; mobility ratio ... See more keywords