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Published in 2021 at "IEEE Transactions on Very Large Scale Integration (VLSI) Systems"
DOI: 10.1109/tvlsi.2021.3059979
Abstract: The electrostrictive 2-D field-effect transistor (EFET) is a steep-slope device that promises to offer aggressive length and voltage scalability. Two key features of this device are its high-drive strength with high ON–OFF current ratio and…
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Keywords:
tradeoffs design;
fpga fabrics;
evaluation tradeoffs;
design fpga ... See more keywords