Characterization of silicon surface states at clean and copper contaminated condition via transient capacitance measurement
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DOI: 10.1063/1.5001117
Abstract: Silicon surface is one of the dominant recombination sites for silicon solar cells. Generally, the recombination ability of silicon surface is characterized in terms of surface recombination velocity. However, silicon surface actually contain a series… read more here.
Keywords: surface states; silicon surface; surface; transient capacitance ... See more keywords