Crystallization dynamics probed by transient resistance in phase change memory cells
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DOI: 10.1063/5.0202152
Abstract: Crystallization (set) time is a key bottleneck to achieve high-speed programming in phase change memory (PCM). Overcoming this limitation requires a deeper understanding of the solidification processes within nanoscale device configuration. This study explores crystallization… read more here.
Keywords: transient resistance; phase change; crystallization dynamics; crystallization ... See more keywords