Suspensions of Semiconducting Nanoparticles in Nafion for Transient Spectroscopy and Terahertz Photoconductivity Measurements.
Sign Up to like & getrecommendations! Published in 2020 at "Analytical chemistry"
DOI: 10.1021/acs.analchem.9b05723
Abstract: Characterization of emerging materials is crucial for experimentally driven design of next generation technologies. We describe a cost- and time-effective method for suspending nanoparticles and other photoactive materials in Nafion for transient spectroscopy and time-resolved… read more here.
Keywords: nafion transient; transient spectroscopy; photoconductivity; nanoparticles nafion ... See more keywords
Unraveling the Active Vanadium Sites and Adsorbate Dynamics in VOx/CeO2 Oxidation Catalysts Using Transient IR Spectroscopy.
Sign Up to like & getrecommendations! Published in 2022 at "Journal of the American Chemical Society"
DOI: 10.1021/jacs.2c06303
Abstract: The oxidative dehydrogenation (ODH) of propane over supported vanadia catalysts is an attractive route toward propene (propylene) with the potential of industrial application and has been extensively studied over decades. Despite numerous mechanistic studies, the… read more here.
Keywords: active vanadium; spectroscopy; adsorbate dynamics; transient spectroscopy ... See more keywords
Characterization of iron in silicon by low-temperature photoluminescence and deep-level transient spectroscopy
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5019958
Abstract: We investigate the relationship between the intensity of band-edge (BDE) photoluminescence (PL) from 10 to 70 K and the concentration of iron diffused in boron-doped p-type silicon. Because of the nonradiative recombination activity of the interstitial… read more here.
Keywords: transient spectroscopy; deep level; level transient; photoluminescence ... See more keywords
Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations
Sign Up to like & getrecommendations! Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0144783
Abstract: The lifetime of deep-ultraviolet light-emitting diodes (LEDs) is still limited by a number of factors, which are mainly related to semiconductor defects, and still need to be clarified. This paper improves the understanding of UV… read more here.
Keywords: deep level; spectroscopy; level transient; transient spectroscopy ... See more keywords
Identification of swift heavy ion induced defects in Pt/n-GaN Schottky diodes by in-situ deep level transient spectroscopy
Sign Up to like & getrecommendations! Published in 2018 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/aacd54
Abstract: In-situ measurements such as deep level transient spectroscopy (DLTS) provide reliable information for the identification of defects in electronic devices. For GaN-based devices exposed to swift heavy ion (SHI) irradiation, in situ DLTS investigations are… read more here.
Keywords: transient spectroscopy; deep level; level transient; ion ... See more keywords
Single-trap emission kinetics of vertical β-Ga2O3 Schottky diodes by deep-level transient spectroscopy
Sign Up to like & getrecommendations! Published in 2021 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/abed8d
Abstract: We report the emission kinetics of a single-electron trap (E1, E C–0.63 eV) in Sn-doped ( 2ˉ 01) β-Ga2O3 crystals studied using deeplevel transient spectroscopy (DLTS). The time constant ( τ ) of the electrons… read more here.
Keywords: emission kinetics; emission; transient spectroscopy; field ... See more keywords