Articles with "transistor" as a keyword



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High‐Speed Organic Single‐Crystal Transistor Responding to Very High Frequency Band

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Published in 2020 at "Advanced Functional Materials"

DOI: 10.1002/adfm.201909501

Abstract: Although high carrier mobility organic field‐effect transistors (OFETs) are required for high‐speed device applications, improving the carrier mobility alone does not lead to high‐speed operation. Because the cut‐off frequency is determined predominantly by the total… read more here.

Keywords: frequency band; high frequency; high speed; frequency ... See more keywords
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Mechanoplastic Tribotronic Floating‐Gate Neuromorphic Transistor

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Published in 2020 at "Advanced Functional Materials"

DOI: 10.1002/adfm.202002506

Abstract: The emulation of synaptic plasticity to achieve sophisticated cognitive functions and adaptive behaviors is critical to the evolution of neuromorphic computation and artificial intelligence. More feasible plastic strategies (e.g., mechanoplasticity) are urgent to achieve comparable,… read more here.

Keywords: tribotronic floating; floating gate; mechanoplastic tribotronic; artificial synapse ... See more keywords
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Newly Synthesized Nonvacuum Processed High‐k Polymeric Dielectrics with Carboxyl Functionality for Highly Stable Operating Printed Transistor Applications

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Published in 2020 at "Advanced Functional Materials"

DOI: 10.1002/adfm.202007304

Abstract: Solution‐processed polar hydroxyl containing polymers such as poly(4‐vinylphenol) are widely utilized in organic filed‐effect transistors (OFETs) due to their high dielectric constant (k) and excellent insulating properties owing to the crosslinking through their hydroxyl groups.… read more here.

Keywords: high polymeric; processed high; synthesized nonvacuum; transistor ... See more keywords
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Highly Efficient Photo‐Induced Recovery Conferred Using Charge‐Transfer Supramolecular Electrets in Bistable Photonic Transistor Memory

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Published in 2021 at "Advanced Functional Materials"

DOI: 10.1002/adfm.202102174

Abstract: Donor–acceptor type polymers and supramolecules are promising electrets in photonic field‐effect transistor (FET)‐type memory because of their diversified polymer‐structure design and favorable mechanical tolerance. Using intermolecular association, supramolecule electrets can surpass donor–acceptor type polymers with… read more here.

Keywords: memory; transistor; charge transfer; supramolecular electrets ... See more keywords
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Realization of Molecular-Based Transistors.

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Published in 2018 at "Advanced materials"

DOI: 10.1002/adma.201706941

Abstract: Molecular-based devices are widely considered as significant candidates to play a role in the next generation of "post-complementary metal-oxide-semiconductor" devices. In this context, molecular-based transistors: molecular junctions that can be electrically gated-are of particular interest… read more here.

Keywords: molecular based; realization molecular; transistor; based transistors ... See more keywords
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Vertical Organic Thin-Film Transistors with an Anodized Permeable Base for Very Low Leakage Current.

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Published in 2019 at "Advanced materials"

DOI: 10.1002/adma.201900917

Abstract: The organic permeable base transistor (OPBT) is currently the fastest organic transistor with a transition frequency of 40 MHz. It relies on a thin aluminum base electrode to control the transistor current. This electrode is… read more here.

Keywords: vertical organic; permeable base; leakage; base ... See more keywords
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2D Cu9 S5 /PtS2 /WSe2 Double Heterojunction Bipolar Transistor with High Current Gain.

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Published in 2021 at "Advanced materials"

DOI: 10.1002/adma.202106537

Abstract: Bipolar junction transistor (BJT), one important circuit element in the integrated circuits, is now widely used in high-speed computation and communication for its capability of high-power signal amplification. 2D materials and their heterostructures are promising… read more here.

Keywords: heterojunction bipolar; gain; current gain; injection efficiency ... See more keywords
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Electrically Reconfigurable Organic Logic Gates: A Promising Perspective on a Dual‐Gate Antiambipolar Transistor

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Published in 2022 at "Advanced Materials"

DOI: 10.1002/adma.202109491

Abstract: Electrically reconfigurable organic logic circuits are promising candidates for realizing new computation architectures, such as artificial intelligence and neuromorphic devices. In this study, multiple logic gate operations are attained based on a dual‐gate organic antiambipolar… read more here.

Keywords: transistor; organic logic; logic gate; reconfigurable organic ... See more keywords
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Reconfigurable Quasi‐Nonvolatile Memory/Subthermionic FET Functions in Ferroelectric–2D Semiconductor vdW Architectures

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Published in 2022 at "Advanced Materials"

DOI: 10.1002/adma.202200032

Abstract: The functional reconfiguration of transistors and memory in homogenous ferroelectric devices offers significant opportunities for implementing the concepts of in‐memory computing and logic‐memory monolithic integration. Thus far, reconfiguration is realized through programmable doping profiles in… read more here.

Keywords: transistor; quasi nonvolatile; semiconductor; reconfigurable quasi ... See more keywords
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An Evolvable Organic Electrochemical Transistor for Neuromorphic Applications

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Published in 2019 at "Advanced Science"

DOI: 10.1002/advs.201801339

Abstract: Abstract An evolvable organic electrochemical transistor (OECT), operating in the hybrid accumulation–depletion mode is reported, which exhibits short‐term and long‐term memory functionalities. The transistor channel, formed by an electropolymerized conducting polymer, can be formed, modulated,… read more here.

Keywords: evolvable organic; long term; organic electrochemical; electrochemical transistor ... See more keywords
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A Graphene‐Based Filament Transistor with Sub‐10 mVdec−1 Subthreshold Swing

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Published in 2018 at "Advanced electronic materials"

DOI: 10.1002/aelm.201700608

Abstract: DOI: 10.1002/aelm.201700608 gap structure cannot be able to integrate in vertical direction. In 2008, Salahuddin et al.[8] proposed negative capacitance transistor using the polarization change induced abrupt switch with steep slope (Figure 1b). But at… read more here.

Keywords: filament transistor; graphene; gate; steep slope ... See more keywords