Reconfigurable field effect transistor for advanced CMOS: Advantages and limitations
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DOI: 10.1016/j.sse.2016.10.027
Abstract: Abstract Reconfigurable FETs (RFETs) are optimized in planar Fully Depleted (FD) SOI. Their basics, electrostatics and performance are studied and compared with standard 28 nm FDSOI and other RFETs results in the literature. The main challenge… read more here.
Keywords: field effect; advanced cmos; effect transistor; reconfigurable field ... See more keywords