Analysis of a Direct-Bandgap GeSn-Based MQW Transistor Laser for Mid-Infrared Applications
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DOI: 10.1007/s11664-019-07418-w
Abstract: We propose the design and analysis of a group-IV material-based (Ge0.84Sn0.16/Si0.09Ge0.8Sn0.11) multiple quantum wells (MQW) transistor laser (TL) for mid-infrared applications. The base region incorporates Ge0.84Sn0.16/Si0.09Ge0.8Sn0.11 MQW structures pseudomorphically grown on silicon through GeSn virtual… read more here.
Keywords: mqw transistor; gesn; mid infrared; transistor laser ... See more keywords