Articles with "transistor model" as a keyword



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Parameter Extraction for the PSPHV LDMOS Transistor Model

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Published in 2020 at "IEEE Journal of the Electron Devices Society"

DOI: 10.1109/jeds.2020.3011635

Abstract: This paper details a robust parameter extraction flow for the PSPHV LDMOS transistor model. The procedure uses a global scaling parameter set and accounts for self-heating. We describe how to determine parameters associated with important… read more here.

Keywords: psphv ldmos; ldmos transistor; psphv; parameter extraction ... See more keywords