One-Transistor Ternary Content-Addressable Memory Based on Localized Ferroelectric Switching for Massive and Accurate Routing
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DOI: 10.1109/led.2023.3345412
Abstract: A novel one-transistor (1T) ternary content-addressable memory (TCAM) in which the don’t care state ‘X’ is implemented based on the localized ferroelectric polarization switching in the ambipolar ferroelectric tunnel field-effect transistors is proposed. Using local… read more here.
Keywords: ternary content; memory; addressable memory; transistor ternary ... See more keywords