Bilayer BaSnO3 thin film transistors on silicon substrates
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DOI: 10.1039/c9tc04815d
Abstract: Barium tin oxide BaSnO3 (BSO) is a novel wide-bandgap semiconducting material with high electron mobility and is considered as a promising alternative to indium-containing amorphous oxide semiconductors. Herein, high-performance BSO thin film transistors (TFTs) on… read more here.
Keywords: basno3 thin; thin film; transistors silicon; bilayer basno3 ... See more keywords