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Published in 2018 at "Nano letters"
DOI: 10.1021/acs.nanolett.8b01091
Abstract: Two-dimensional transition-metal dichalcogenides (TMDs) are unique candidates for the development of next-generation electronic devices. However, the large contact resistance between metal and the monolayer TMDs have significantly limited the devices' performance. Also, the integration of…
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Keywords:
disulfide transistors;
gate;
transistors single;
molybdenum disulfide ... See more keywords