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Published in 2023 at "Materials"
DOI: 10.3390/ma16020582
Abstract: In this study, we propose and simulate the design of a non-regrowth staircase channel GaN vertical trench transistor, demonstrating an exceptional threshold and breakdown characteristic for high power and high frequency applications. The unique staircase…
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Keywords:
channels high;
gan vertical;
transistors staircase;
voltage ... See more keywords