Transition from Schottky-to-Ohmic contacts in 1T VSe2-based van der Waals heterojunctions: Stacking and strain effects
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DOI: 10.1016/j.apsusc.2020.146168
Abstract: Abstract For its ultra-high conductivity, room temperature ferromagnetic, and robust stability, monolayer 1T VSe2 acts as a promising two-dimensional (2D) material for new spintronics device. However, Ohmic contact with semiconductor is a desirable property for… read more here.
Keywords: van der; der waals; transition schottky; waals heterojunctions ... See more keywords