Electronic transport in epitaxial 4H–SiC based Schottky diodes modified selectively by swift heavy ions
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DOI: 10.1016/j.mssp.2020.105108
Abstract: Abstract Modifications in the defects and electronic transport properties of epitaxial 4H-nSiC(0001) Schottky barrier diodes have been carried out by selective 200 MeV Ag+14 ions irradiation, i.e., ions projected only on the Schottky contact area of… read more here.
Keywords: irradiation; transport; transport epitaxial; epitaxial sic ... See more keywords