The Effect of Functionalization on Spin-Polarized Transport of Gallium Nitride–Based Magnetic Tunnel Junctions
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DOI: 10.1007/s10948-019-05307-1
Abstract: Using first-principles spin-polarized density functional theory computations, the effect of functionalization (fluorination and hydrogenation) on spin-polarized transport of gallium nitride (GaN) nanosheet–based magnetic tunnel junction (MTJ) with CrO 2 as electrodes is investigated. The results… read more here.
Keywords: transport gallium; effect functionalization; gallium nitride; spin ... See more keywords