An Improved Model for Quasi-Ballistic Transport in MOSFETs
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DOI: 10.1109/ted.2017.2706301
Abstract: We have already presented a compact model for FETs operating in the quasi-ballistic regime [1]. However, this model suffers from two important problems: 1) the profile for charge density along the channel is not correctly… read more here.
Keywords: improved model; model quasi; ballistic transport; quasi ballistic ... See more keywords