Quantum transport simulation of the two-dimensional GaSb transistors
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DOI: 10.1088/1674-4926/42/12/122001
Abstract: Owing to the high carrier mobility, two-dimensional (2D) gallium antimonite (GaSb) is a promising channel material for field-effect transistors (FETs) in the post-silicon era. We investigated the ballistic performance of the 2D GaSb metal–oxide–semiconductor FETs… read more here.
Keywords: gasb; two dimensional; quantum transport; simulation two ... See more keywords