Intrinsic (Trap‐Free) Transistors Based on Epitaxial Single‐Crystal Perovskites
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202205055
Abstract: The first experimental realization of the intrinsic (not dominated by defects) charge conduction regime in lead‐halide perovskite field‐effect transistors (FETs) is reported. The advance is enabled by: i) a new vapor‐phase epitaxy technique that results… read more here.
Keywords: transistors based; trap free; based epitaxial; intrinsic trap ... See more keywords
Trap-Free Heterostructure of PbS Nanoplatelets on InP(001) by Chemical Epitaxy.
Sign Up to like & getrecommendations! Published in 2019 at "ACS nano"
DOI: 10.1021/acsnano.8b08413
Abstract: Semiconductor nanocrystalline heterostructures can be produced by the immersion of semiconductor substrates into an aqueous precursor solution, but this approach usually leads to a high density of interfacial traps. In this work, we study the… read more here.
Keywords: free heterostructure; pbs nanoplatelets; trap free; inp 001 ... See more keywords