A Generic Trap Generation Framework for MOSFET Reliability—Part I: Gate Only Stress–BTI, SILC, and TDDB
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2023.3291333
Abstract: The Reaction-Diffusion-Drift model is validated as a trap generation framework during Bias Temperature Instability (BTI), Stress Induced Leakage Current (SILC), and Time Dependent Dielectric Breakdown (TDDB) experiments. The model is implemented in standalone and Technology… read more here.
Keywords: generation; stress; trap generation; model ... See more keywords
Investigation of Charge Trapping Induced Trap Generation in Si FeFET With Ferroelectric Hf0.5Zr0.5O2
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2024.3351599
Abstract: We investigate charge trapping induced trap generation in Si ferroelectric field-effect transistor (FeFET) with ferroelectric Hf0.5Zr0.5O2/SiO2 gate stacks by split ${I}$ – ${V}$ measurement. We find that the recombination of electrons and holes within the… read more here.
Keywords: trapping induced; generation; charge trapping; fefet ferroelectric ... See more keywords