Modeling Gain Mechanisms in Amorphous Silicon Due to Efficient Carrier Multiplication and Trap-Induced Junction Modulation
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Lightwave Technology"
DOI: 10.1109/jlt.2019.2927622
Abstract: Amorphous materials have low mobility due to their nature of disorder. Surprisingly, some disordered materials showed photocurrent amplification not by conventional photoconductive gain. Recently, amorphous Silicon (a-Si) photodiodes with thin a-Si layer (∼40 nm) have… read more here.
Keywords: carrier multiplication; amorphous silicon; trap induced; gain ... See more keywords
Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in β-Ga2O3 Field-Effect Transistors
Sign Up to like & getrecommendations! Published in 2021 at "Nanomaterials"
DOI: 10.3390/nano11020494
Abstract: Interface traps between a gate insulator and beta-gallium oxide (β-Ga2O3) channel are extensively studied because of the interface trap charge-induced instability and hysteresis. In this work, their effects on mobility degradation at low temperature and… read more here.
Keywords: temperature; mobility; hysteresis; trap induced ... See more keywords