Reservoir Computing with Charge-trap Memory Based on a MoS2 Channel for Neuromorphic Engineering.
Sign Up to like & getrecommendations! Published in 2022 at "Advanced materials"
DOI: 10.1002/adma.202205381
Abstract: Novel memory devices are essential for developing low power, fast and accurate in-memory computing and neuromorphic engineering concepts that can compete with the conventional CMOS digital processors. 2D semiconductors provide a novel platform for advanced… read more here.
Keywords: mos2 channel; neuromorphic engineering; trap memory; charge trap ... See more keywords
The Effect of Heavy-Ion Strikes on Charge Trap Memory Arrays With Analog State Programmability
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2024.3505962
Abstract: Single-event effects (SEEs) induced by heavy ions were characterized on 32 distinct conductance states in 40-nm silicon-oxide–nitride-oxide–silicon (SONOS) charge-trap memory. These states were programmed onto three chips, each containing 256K SONOS memory devices in an… read more here.
Keywords: heavy ion; memory; charge trap; trap memory ... See more keywords