Reservoir Computing with Charge-trap Memory Based on a MoS2 Channel for Neuromorphic Engineering.
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DOI: 10.1002/adma.202205381
Abstract: Novel memory devices are essential for developing low power, fast and accurate in-memory computing and neuromorphic engineering concepts that can compete with the conventional CMOS digital processors. 2D semiconductors provide a novel platform for advanced… read more here.
Keywords: mos2 channel; neuromorphic engineering; trap memory; charge trap ... See more keywords