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Published in 2018 at "Advanced materials"
DOI: 10.1002/adma.201804332
Abstract: Defect-induced trap states are essential in determining the performance of semiconductor photodetectors. The de-trap time of carriers from a deep trap can be prolonged by several orders of magnitude as compared to shallow traps, resulting…
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Keywords:
trap states;
defect engineering;
time;
device ... See more keywords
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Published in 2021 at "Chemistry of Materials"
DOI: 10.1021/acs.chemmater.1c00561
Abstract: Trap states play a crucial role in the design of colloidal quantum dot (QD)-based technologies. The presence of these in-gap states can either significantly limit the efficiency of devices (e.g., in solar cells or LEDs)…
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Keywords:
trap states;
metal;
metal based;
colloidal quantum ... See more keywords
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Published in 2018 at "Journal of Physical Chemistry C"
DOI: 10.1021/acs.jpcc.8b06854
Abstract: In this work, we present a generic semiclassical approach for theoretically evaluating the impact of bulk trap states on the maximum attainable photovoltage in solar-assisted water-splitting reactions. Our method explicitly considers the charge contribution due…
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Keywords:
trap states;
attainable photovoltage;
band;
maximum attainable ... See more keywords
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Published in 2022 at "Nano letters"
DOI: 10.1021/acs.nanolett.2c02533
Abstract: Two dimensional Dion-Jacobson (2D DJ) perovskite has emerged as a potential photovoltaic material because of its unique optoelectronic characteristics. However, due to its low structural flexibility and high formation energy, extra assistance is needed during…
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Keywords:
two dimensional;
jacobson perovskite;
trap states;
dimensional dion ... See more keywords
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Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c16203
Abstract: All-inorganic perovskites are promising candidates for solar energy and optoelectronic applications, despite their polycrystalline nature with a large density of grain boundaries (GBs) due to facile solution-processed fabrication. GBs exhibit complex atomistic structures undergoing slow…
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Keywords:
perovskite;
grain boundaries;
charge;
trap states ... See more keywords
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Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c17821
Abstract: Palladium diselenide (PdSe2), as an emerging two-dimensional (2D) layered material, is gaining growing attention in nanoelectronics and optoelectronics due to its thickness-dependent band gap, high carrier mobility, and good air stability. However, its asymmetric pentagon…
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Keywords:
hopping transport;
two dimensional;
induced trap;
trap states ... See more keywords
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Published in 2022 at "Journal of the American Chemical Society"
DOI: 10.1021/jacs.2c02027
Abstract: One of the most promising properties of lead halide perovskite nanocrystals (NCs) is their defect tolerance. It is often argued that, due to the electronic structure of the conduction and valence bands, undercoordinated ions can…
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Keywords:
trap states;
trap;
perovskite nanocrystals;
defect tolerance ... See more keywords
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2
Published in 2023 at "Nanoscale"
DOI: 10.1039/d2nr05044g
Abstract: Localized surface plasmon resonance (LSPR)-induced hot-carrier transfer provides an attractive alternative for light-harvesting using the full solar spectrum. This defect-mediated hot-carrier transfer is identical at the plasmonic semiconductor/semiconductor interface and can overcome the low efficiency…
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Keywords:
semiconductor semiconductor;
trap states;
semiconductor;
hole transfer ... See more keywords
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Published in 2021 at "Journal of Applied Physics"
DOI: 10.1063/5.0058515
Abstract: In an organic semiconductor optoelectronic device, the built-in field within the active layer is typically determined by the difference in contact potentials of the device. However, the presence of space charges and trap states contribute…
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Keywords:
presence;
trap states;
presence traps;
internal fields ... See more keywords
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Published in 2023 at "AIP Advances"
DOI: 10.1063/5.0144550
Abstract: A 13 kV class n-channel 4H–SiC trench gate insulated gate bipolar transistor (IGBT) structure is designed based on Silvaco TCAD device simulator tool. The influence of metal/SiC and SiC MOS interface trap states on the static…
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Keywords:
mos interface;
interface trap;
trap states;
interface ... See more keywords
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Published in 2023 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/acd4cc
Abstract: The need for simple-to-manufacture, solution-processable, tunable infrared active optoelectronic materials led to the development of infrared colloidal quantum dots, whose band gaps may be easily regulated by dimensional constraints resulting from the quantum confinement. Due…
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Keywords:
trap states;
trap;
transport;
tio2 hgte ... See more keywords